Performance Improvement in RF LDMOS Transistors Using Wider Drain Contact
نویسندگان
چکیده
منابع مشابه
Design and Characterization of RF-Power LDMOS Transistors
Success is not final, failure is not fatal: it is the courage to continue that counts. III " Investigation of the non-linear input capacitance in LDMOS transistors and its contribution to IMD and phase distortion, " The following papers are related to the work in this thesis but have not been included.
متن کاملA 5000 h RF life test on 330 W RF-LDMOS transistors for radars applications
A reliability test bench dedicated to RF power devices is used to improve 330 W LDMOS in a radar conditions. The monitoring of RF power, drain, gate voltages and currents under various pulses and temperatures conditions are investigated. Numerous duty cycles are applied in order to stress LDMOS. It shows with tracking all this parameters that only few hot carrier injection phenomenon appear wit...
متن کاملA New Improved Model for LDMOS Transistors under Different Gate and Drain Bias Conditions
The behaviour of the capacitances of LDMOS devices as a function of gate and drain bias is analysed using TCAD simulations and S-parameter measurements. Both simulations and measurements revealed that instead of the smooth sigmoïd shape usually seen in MOSTs, the capacitances of LDMOS devices show a distinct ridge at low values of Vds. A full analysis of this phenomena is used to propose a sign...
متن کاملContact resistance in organic transistors that use source and drain electrodes formed by soft contact lamination
Soft contact lamination of source/drain electrodes supported by gold-coated high-resolution rubber stamps against organic semiconductor films can yield high-performance organic transistors. This article presents a detailed study of the electrical properties of these devices, with an emphasis on the nature of the laminated contacts with the pand n-type semiconductors pentacene and copper hexadec...
متن کاملSimulation of nonequilibrium thermal effects in power LDMOS transistors
The present work considers electrothermal simulation of LDMOS devices and associated nonequilibrium effects. Simulations have been performed on three kinds of LDMOS: bulk Si, partial SOI and full SOI. Differences between equilibrium and nonequilibrium modeling approaches are examined. The extent and significance of thermal nonequilibrium is determined from phonon temperature distributions obtai...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 2013
ISSN: 0741-3106,1558-0563
DOI: 10.1109/led.2013.2272937